SI3443CDV-T1-GE3 The Vishay Dale SI3443CDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 5.97A. It is supplied in a TSOP-6 package.
Mfr Part #:

SI3443CDV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3443CDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 5.97A. It is supplied in a TSOP-6 package.
✓ Total Stock: 30,160 pcs
$ Price Range: $0.99

SI3443CDV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,140 pcs
23140 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request

SI3443CDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3443CDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3443CDV-T1-GE3 is a P-Channel Power MOSFET designed for applications such as HDD, asynchronous rectification, and load switching for portable devices. It features a drain-source breakdown voltage of 20V and a maximum continuous drain current of 5.97A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 60mOhm at a gate-source voltage of -4.5V and a drain current of -4.7A. The gate charge (Qg) is a maximum of 12.4 nC at 5V. It operates within a temperature range of -55°C to 150°C.

 

The device is packaged in a 6-TSOP (SOT-23-6 Thin) surface-mount package. It is compliant with RoHS3 standards and is halogen-free. The maximum power dissipation is rated at 3.2W (Tc) or 2W (Ta).

 

Key electrical characteristics include a gate-source voltage rating of ±12V and a gate-source threshold voltage of 1.5V maximum at 250µA. The input capacitance (Ciss) is 610 pF at 10V.

SI3443CDV-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si3
Canonical Name: P-Channel 20V 5.97A (Tc) MOSFET
Subcategory: P-Channel

SI3443CDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3443CDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3443CDV-T1-GE3 Features

  • P-Channel 20V MOSFET
  • 5.97A continuous drain current
  • Low Rds On: 60mOhm at Vgs=-4.5V
  • TSOP-6 surface mount package
  • Halogen-free and RoHS3 compliant

SI3443CDV-T1-GE3 Applications

  • Load switching in portable electronics.
  • Power management for battery-powered devices.
  • DC-DC converter output stage switching.
  • Low-voltage motor and actuator control.

SI3443CDV-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI3443CDV-T1-GE3?

The drain-source breakdown voltage is -20V minimum at VGS = 0V and ID = -250µA.

What is the maximum continuous drain current?

The maximum continuous drain current is -5.97A at case temperature 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 60mOhm at VGS = -4.5V and ID = -4.7A, and 100mOhm at VGS = -2.5V and ID = -3.4A.

What package does the SI3443CDV-T1-GE3 come in?

It comes in a TSOP-6 (SOT-23-6 Thin) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the SI3443CDV-T1-GE3 halogen-free?

Yes, the device is halogen-free as per the datasheet.

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