| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
655 pcs
|
655 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI3443BDV-T1-E3 is a P-Channel MOSFET belonging to the TrenchFET® series. It is designed for applications requiring efficient power switching and control.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.6A at 25°C. The on-resistance (Rds On) is a maximum of 60mOhm at 4.7A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA, and the maximum gate-to-source voltage is ±12V. The gate charge (Qg) is a maximum of 9nC at 4.5V.
This MOSFET has a maximum power dissipation of 1.1W at 25°C and operates within a temperature range of -55°C to 150°C. It is housed in a 6-TSOP package and is designed for surface mounting.
The SI3443BDV-T1-E3 is suitable for a range of applications where a reliable P-Channel MOSFET is required, offering a balance of performance and thermal management in a compact package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) at 25°C is 3.6A.
The maximum on-resistance (Rds On) is 60mOhm at 4.7A and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.