| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
32,333 pcs
|
32333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
5,664 pcs
|
5664 pcs | On Request | 1 | On Request | On Request | 0802+ | On Request | On Request | |
|
4,807 pcs
|
4807 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,443 pcs
|
3443 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,805 pcs
|
1805 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3443BDV-T1-E3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 3.6A at 25°C ambient temperature. The device offers a low on-state resistance of 60mΩ at 4.7A and 4.5V Vgs.
This MOSFET is constructed using TrenchFET® technology and is housed in a compact 6-TSOP package, suitable for surface mounting. It operates within a temperature range of -55°C to +150°C. The device is RoHS3 compliant.
Key electrical characteristics include a gate threshold voltage of -1.4V maximum and a gate charge of 9nC typical. The maximum power dissipation is rated at 1.1W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI3443BDV-T1-E3 is 20V.
The continuous drain current (Id) for the SI3443BDV-T1-E3 is 3.6A at 25°C ambient temperature.
The Rds On is a maximum of 60mΩ at 4.7A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
The SI3443BDV-T1-E3 is supplied in a 6-TSOP package.
Yes, the SI3443BDV-T1-E3 is RoHS3 Compliant.