SI3442CDV-T1-GE3 The Vishay Dale SI3442CDV-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 8A continuous drain current. It features a low 27mOhm on-resistance and is supplied in a surface-mount TSOP package.
Mfr Part #:

SI3442CDV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3442CDV-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 8A continuous drain current. It features a low 27mOhm on-resistance and is supplied in a surface-mount TSOP package.
✓ Total Stock: 603,376 pcs
$ Price Range: $0.99

SI3442CDV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
602,667 pcs
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Non-Authorised Inventory information
709 pcs
709 pcs On Request 1 On Request On Request On Request On Request On Request

SI3442CDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3442CDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3442CDV-T1-GE3 is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 8A.

 

Key electrical characteristics include a low on-resistance (Rds On) of 27mOhm at 6.5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The MOSFET has a gate-source voltage range of ±12V and an input capacitance of 335pF at 10V.

 

This device operates across a wide temperature range from -55°C to 150°C. It is packaged in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. The maximum power dissipation is rated at 1.7W (Ta) and 2.7W (Tc).

 

Applications include DC/DC converters, boost converters, and load switching.

SI3442CDV-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SI3442CDV-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI3442CDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3442CDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3442CDV-T1-GE3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current up to 8A.
  • Low on-resistance of 27mOhm at 10V.
  • Wide operating temperature range: -55°C to 150°C.
  • Compact TSOP-6 surface-mount package.

SI3442CDV-T1-GE3 Applications

  • Used in power management and load switching.
  • Ideal for DC-DC converter circuits.
  • Suitable for battery protection systems.
  • Can be used in portable electronics.

SI3442CDV-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI3442CDV-T1-GE3?

The drain-source voltage (Vds) is 20V.

What is the continuous drain current of the SI3442CDV-T1-GE3?

The continuous drain current (Id) is 8A at 25°C case temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 27mOhm at 6.5A drain current and 10V gate-source voltage.

What is the operating temperature range of the SI3442CDV-T1-GE3?

The operating temperature range is -55°C to 150°C.

What package type is the SI3442CDV-T1-GE3 supplied in?

It is supplied in a TSOP-6 (SOT-23-6 Thin) surface-mount package.

Is the SI3442CDV-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

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