| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,722 pcs
|
1722 pcs | On Request | 1 | On Request | On Request | 0522+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3441DV is a P-Channel MOSFET manufactured by On Semiconductor. This component is designed for surface mount applications and comes in a SOT-23-6 Thin, TSOT-23-6 package, specifically utilizing the SuperSOT™-6 footprint. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 3.5A at ambient temperature. The on-resistance (Rds On) is rated at a maximum of 80mOhm at 3.5A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1.5V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±8V. Input capacitance (Ciss) is 779pF at 10V, and gate charge (Qg) is 10nC at 4.5V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 800mW (Ta). It is constructed using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
3.5A at ambient temperature.
80mOhm at 3.5A and 4.5V gate drive.
SuperSOT-6 surface-mount package, also available as SOT-23-6 Thin or TSOT-23-6.
-55°C to 150°C junction temperature.
1.5V at 250µA drain current.
800mW at ambient temperature.