SI3441BDV-T1-E3 The Vishay Dale SI3441BDV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 2.45A. It is supplied in a 6-TSOP package for surface mounting.
Mfr Part #:

SI3441BDV-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3441BDV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 2.45A. It is supplied in a 6-TSOP package for surface mounting.
✓ Total Stock: 3,860 pcs
$ Price Range: $0.99

SI3441BDV-T1-E3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,107 pcs
3107 pcs On Request 1 On Request On Request 63+ On Request On Request
Non-Authorised Inventory information
508 pcs
508 pcs On Request 1 On Request On Request On Request On Request On Request
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245 pcs
245 pcs On Request 1 On Request On Request On Request On Request 2026-05-08 04:17:45

SI3441BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3441BDV-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI3441BDV-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.45A at a gate-source voltage (Vgs) of 4.5V. The on-resistance (Rds On) is a maximum of 90mOhm at 3.3A and 4.5V Vgs.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a SOT-23-6 Thin, TSOT-23-6 (6-TSOP) configuration, suitable for surface mounting. The gate charge (Qg) is a maximum of 8 nC at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is 850mV at 250µA.

 

With a maximum power dissipation of 860mW (Ta), this MOSFET is a reliable component for power management and switching circuits. Its P-Channel configuration and specific electrical characteristics make it suitable for applications requiring efficient power control.

SI3441BDV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3441BDV-T1-E3 P-Channel MOSFET
Subcategory: Single

SI3441BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3441BDV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3441BDV-T1-E3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 2.45A.
  • Maximum on-resistance of 90mOhm.
  • Surface mountable 6-TSOP package.
  • Wide operating temperature range.

SI3441BDV-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for voltage regulation.
  • Used in battery management systems.
  • Applicable in load control circuits.

SI3441BDV-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI3441BDV-T1-E3?

The maximum drain-source voltage is 20V.

What is the maximum continuous drain current?

The continuous drain current is 2.45A at 4.5V gate drive.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 90mOhm at 3.3A drain current and 4.5V gate-source voltage.

What is the gate threshold voltage?

The maximum gate threshold voltage is 850mV at 250µA drain current.

What package is the SI3441BDV-T1-E3 available in?

It is available in a surface-mount 6-TSOP package (SOT-23-6 thin variant).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

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