Mfr Part #:

SI3440DV-T1-E3

Mfr Name: Vishay

The Vishay SI3440DV-T1-E3 is an N-Channel MOSFET with a 150V drain-source breakdown voltage and a continuous drain current of 1.2A. It is supplied in a surface mount TSOP-6 package.

✓ Total Stock: 101,919 pcs

$ Price Range: $0.99

SI3440DV-T1-E3 Available from 6 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	90,400 pcs On Request	90400 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	5,736 pcs On Request	5736 pcs	On Request	1	On Request	On Request	14+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	5,050 pcs On Request	5050 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	581 pcs On Request	581 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	80 pcs On Request	80 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	72 pcs On Request	72 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI3440DV-T1-E3 Description

Short technical summary and product information.

The Vishay SI3440DV-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 150V and a continuous drain current of 1.2A at a specific ambient temperature. The MOSFET has a maximum Rds On of 375mOhm at 1.5A and 10V gate-source voltage.

This component operates within a temperature range of -55°C to 150°C. It utilizes Silicon (Si) technology and has a gate charge of 8 nC at 10V. The gate-source voltage can range up to ±20V, with a threshold voltage of 4V at 250µA.

The SI3440DV-T1-E3 is packaged in a compact 6-TSOP (SOT-23-6 Thin) surface mount configuration, suitable for space-constrained designs. It is available in Reel and Cut Tape packaging options. The maximum power dissipation is rated at 1.14W at a specific ambient temperature.

SI3440DV-T1-E3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay SI3440DV-T1-E3 N-Channel MOSFET

Subcategory: N-Channel

SI3440DV-T1-E3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI3440DV-T1-E3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3440DV-T1-E3 Features

150V drain-source breakdown voltage.
1.2A continuous drain current.
375mOhm maximum Rds On.
Surface mount TSOP-6 package.
Wide -55°C to 150°C operating temperature.

SI3440DV-T1-E3 Applications

Suitable for power switching applications.
Ideal for general purpose electronics.
Used in compact circuit designs.
Efficient power management solutions.

SI3440DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

150V.

What is the continuous drain current?

1.2A at ambient temperature.

What is the on-resistance?

375mOhm maximum at Vgs=10V, Id=1.5A.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is it available in?

TSOP-6 surface mount package.

What is the gate charge?

8nC at 10V gate drive.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.2 A (Ta)
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	1.14 W (Ta)
Rds On (Max) @ Id, Vgs	375 mOhm @ 1.5A, 10V
Supplier Device Package	6-TSOP
Technology	Si
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA