| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
516,571 pcs
|
516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22,020 pcs
|
22020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI3440ADV-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale, housed in a 6TSOP package. It features a drain-source breakdown voltage of 150V minimum and a continuous drain current rating of 2.2A. The device is designed for efficient power switching with a maximum on-resistance of 380mOhm when driven at a gate-source voltage of 10V and a drain current of 1.5A.
The gate-source voltage is rated up to ±20V, providing flexibility in drive circuit design. The gate-source threshold voltage is specified at a maximum of 4V at 250µA drain current, ensuring reliable turn-on in logic-level control schemes.
Typical applications include power supply units, DC-DC converters, load switching, and other general-purpose switching circuits where moderate voltage and current ratings are required. The 6TSOP package offers a compact footprint for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V minimum at VGS=0V, ID=250µA.
±20V.
4V maximum at ID=250µA.
380mOhm maximum at ID=1.5A, VGS=10V.