SI3437DV-T1-GE3 The Vishay Dale SI3437DV-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 1.4A continuous drain current. It is available in a surface mount SOT-23-6 package.
Mfr Part #:

SI3437DV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3437DV-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 1.4A continuous drain current. It is available in a surface mount SOT-23-6 package.
✓ Total Stock: 109,036 pcs
$ Price Range: $0.99

SI3437DV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
105,016 pcs
105016 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

SI3437DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3437DV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3437DV-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 150V and a continuous drain current of 1.4A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance of 750mOhm at 10V gate-source voltage and 1.4A drain current. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) with a TrenchFET design.

 

Key electrical characteristics include a gate charge of 19nC at 10V and an input capacitance of 510pF at 50V. The maximum power dissipation is rated at 3.2W (Tc) and 2W (Ta).

 

Applications include active clamp circuits in DC/DC power supplies. The device is compliant with RoHS3 standards and is halogen-free.

SI3437DV-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si3
Canonical Name: Vishay Dale SI3437DV-T1-GE3 P-Channel 150V MOSFET
Subcategory: P-Channel

SI3437DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3437DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3437DV-T1-GE3 Features

  • P-Channel 150V MOSFET.
  • Low Rds On: 750mOhm at 10V.
  • Surface mount SOT-23-6 package.
  • Halogen-free and RoHS3 compliant.
  • Suitable for DC/DC power supplies.

SI3437DV-T1-GE3 Applications

  • Used in active clamp circuits.
  • Ideal for DC/DC power supplies.
  • Suitable for power switching applications.

SI3437DV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 150V.

What is the continuous drain current?

The continuous drain current is 1.4A at 25°C case temperature.

What is the Rds On (Max) at 10V Vgs?

The Rds On is a maximum of 0.75 Ohms at 1.4A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the MOSFET in?

The MOSFET is in a SOT-23-6 Thin, TSOT-23-6 package.

Is this MOSFET RoHS compliant?

Yes, this MOSFET is RoHS3 compliant.

Is this MOSFET halogen-free?

Yes, this MOSFET is halogen-free.

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