SI3437DV-T1-E3 The Vishay SI3437DV-T1-E3 is a P-Channel MOSFET with a 150V drain-source breakdown voltage and a continuous drain current of 1.4A. It features a low on-resistance of 750mOhm at 10V.
Mfr Part #:

SI3437DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI3437DV-T1-E3 is a P-Channel MOSFET with a 150V drain-source breakdown voltage and a continuous drain current of 1.4A. It features a low on-resistance of 750mOhm at 10V.
✓ Total Stock: 34,020 pcs
$ Price Range: $0.99

SI3437DV-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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34,020 pcs
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SI3437DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3437DV-T1-E3 Description

Short technical summary and product information.

The Vishay SI3437DV-T1-E3 is a P-Channel MOSFET designed for power applications. It offers a drain-source breakdown voltage of 150V and a continuous drain current rating of 1.4A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance of 750mOhm at a gate-source voltage of 10V and a gate charge of 19nC. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This component is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. Its features, such as TrenchFET power MOSFET technology and 100% Rg and UIS tested, make it a reliable choice for active clamp circuits in DC/DC power supplies.

 

The device is RoHS3 compliant and Halogen-free, aligning with modern environmental standards.

SI3437DV-T1-E3 Quick Information

Product Type: MOSFET
Series: Si3
Canonical Name: Vishay SI3437DV-T1-E3 P-Channel MOSFET
Subcategory: P-Channel

SI3437DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3437DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3437DV-T1-E3 Features

  • P-Channel MOSFET with 150V breakdown voltage.
  • 1.4A continuous drain current rating.
  • Low Rds(on) of 750mOhm at 10V.
  • Compact 6-TSOP surface-mount package.
  • Suitable for DC/DC power supply applications.

SI3437DV-T1-E3 Applications

  • Active clamp circuits in DC/DC power supplies
  • P-channel load switching applications
  • Power management for portable electronics
  • Battery protection and charging circuits

SI3437DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI3437DV-T1-E3?

The drain-source breakdown voltage is 150V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.4A at 25°C case temperature.

What is the Rds On at 10V gate-source voltage?

The Rds On is a maximum of 750mOhm at 1.4A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3437DV-T1-E3 in?

It is in a 6-TSOP package.

Is the SI3437DV-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI3437DV-T1-E3 Halogen-free?

Yes, it is Halogen-free.

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