SI3433CDV-T1-GE3 The Vishay Dale SI3433CDV-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 6A Continuous Drain Current. It features a low Rds On of 38mOhm at 4.5V.
Mfr Part #:

SI3433CDV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3433CDV-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 6A Continuous Drain Current. It features a low Rds On of 38mOhm at 4.5V.
✓ Total Stock: 301,047 pcs
$ Price Range: $0.99

SI3433CDV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
47 pcs
47 pcs On Request 1 On Request On Request On Request On Request On Request

SI3433CDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3433CDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3433CDV-T1-GE3 is a P-Channel MOSFET designed for load switch applications. It offers a Drain-Source Voltage (Vds) of 20V and a continuous drain current of up to 6A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 38mOhm at a gate-source voltage (Vgs) of 4.5V. The device also features a typical gate charge (Qg) of 45nC at 8V Vgs and an input capacitance (Ciss) of 1300pF at 10V Vds.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact 6-TSOP surface-mount package, suitable for space-constrained designs. The device is RoHS3 compliant and has an MSL 1 rating.

 

Applications include load switching in notebook computers and other portable electronic devices where efficient power management is critical.

SI3433CDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3433CDV-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI3433CDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3433CDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3433CDV-T1-GE3 Features

  • P-Channel MOSFET with 20V Drain-Source Voltage.
  • 6A Continuous Drain Current capability.
  • Low 38mOhm maximum Rds On at 4.5V.
  • Compact 6-TSOP surface-mount package.
  • TrenchFET power MOSFET technology.

SI3433CDV-T1-GE3 Applications

  • Ideal for load switch applications.
  • Suitable for notebook computers.
  • Used in portable electronic devices.
  • Efficient power management designs.

SI3433CDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vds) of the SI3433CDV-T1-GE3?

The Drain-Source Voltage (Vds) is 20 V.

What is the maximum continuous drain current for the SI3433CDV-T1-GE3?

The maximum continuous drain current is 6 A at 25°C case temperature.

What is the Rds On (Max) for the SI3433CDV-T1-GE3?

The Rds On (Max) is 38mOhm at 5.2A drain current and 4.5V gate-source voltage.

What is the operating temperature range of the SI3433CDV-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SI3433CDV-T1-GE3 available in?

The SI3433CDV-T1-GE3 is available in a 6-TSOP package.

Is the SI3433CDV-T1-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI3433CDV-T1-GE3?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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