SI3433BDV-T1-GE3 The Vishay Dale SI3433BDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage rating. It offers a maximum continuous drain current of 4.3A and a low Rds On of 42mOhm.
Mfr Part #:

SI3433BDV-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3433BDV-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage rating. It offers a maximum continuous drain current of 4.3A and a low Rds On of 42mOhm.
✓ Total Stock: 52,691 pcs
$ Price Range: $0.99

SI3433BDV-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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52,691 pcs
52691 pcs On Request 1 On Request On Request 1223+ On Request On Request

SI3433BDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3433BDV-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI3433BDV-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. It features a drain-to-source voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 4.3A at 25°C.

 

The MOSFET has a low Rds On of 42mOhm at 5.6A and 4.5V Vgs, with a gate threshold voltage of 850mV at 250µA. The operating temperature range is -55°C to 150°C (TJ), and it has a maximum power dissipation of 1.1W (Ta).

 

Packaged in a 6-TSOP (SOT-23-6 Thin, TSOT-23-6), this component is suitable for various electronic circuits requiring efficient switching and power management. The RoHS status is compliant, and it has an MSL rating of 1.

SI3433BDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3433BDV-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI3433BDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3433BDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3433BDV-T1-GE3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Maximum continuous drain current of 4.3A.
  • Low Rds On of 42mOhm at 5.6A, 4.5V.
  • Surface mountable in 6-TSOP package.
  • Wide operating temperature range of -55°C to 150°C.

SI3433BDV-T1-GE3 Applications

  • Used in power switching circuits.
  • Suitable for battery management systems.
  • Ideal for load switch applications.
  • Applicable in portable electronic devices.

SI3433BDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI3433BDV-T1-GE3?

The drain-to-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.3A at 25°C.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 42mOhm when the drain current is 5.6A and gate-source voltage is 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI3433BDV-T1-GE3 in?

It is in a 6-TSOP package, also known as SOT-23-6 Thin or TSOT-23-6.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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