SI3433BDV-T1-E3 The Vishay Dale SI3433BDV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 4.3A continuous current. It is designed for surface mounting in a SOT-23-6 Thin or TSOT-23-6 package.
Mfr Part #:

SI3433BDV-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3433BDV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 4.3A continuous current. It is designed for surface mounting in a SOT-23-6 Thin or TSOT-23-6 package.
✓ Total Stock: 91,546 pcs
$ Price Range: $0.99

SI3433BDV-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,400 pcs
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,146 pcs
1146 pcs On Request 1 On Request On Request On Request On Request On Request

SI3433BDV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3433BDV-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI3433BDV-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 4.3A at ambient temperature.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum gate charge (Qg) of 18 nC at 4.5V and a maximum gate threshold voltage (Vgs(th)) of 850mV at 250µA. The on-resistance (Rds On) is a maximum of 42mOhm at 5.6A and 4.5V, with drive voltages ranging from 1.8V to 4.5V.

 

Packaged in a SOT-23-6 Thin or TSOT-23-6 configuration, this device is intended for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles, making it suitable for switching and amplification circuits where P-Channel characteristics are required.

SI3433BDV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3433BDV-T1-E3 P-Channel MOSFET
Subcategory: Single

SI3433BDV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3433BDV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3433BDV-T1-E3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 4.3A.
  • Surface mount SOT-23-6 Thin/TSOT-23-6 package.
  • Wide operating temperature range: -55°C to 150°C.
  • Low on-resistance: 42mOhm at 5.6A, 4.5V.

SI3433BDV-T1-E3 Applications

  • Suitable for power switching applications.
  • Used in battery management circuits.
  • Ideal for load switch designs.
  • Applicable in portable electronic devices.

SI3433BDV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI3433BDV-T1-E3?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 4.3A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 42mOhm at a gate-source voltage of 4.5V and drain current of 5.6A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 0.85V at a drain current of 250µA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SI3433BDV-T1-E3 available in?

It is available in a SOT-23-6 Thin (TSOT-23-6) surface mount package with a 6-TSOP supplier device package.

What is the total gate charge of this MOSFET?

The maximum total gate charge is 18nC at a gate-source voltage of 4.5V.

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