SI3430DV-T1-GE3 The Vishay Dale SI3430DV-T1-GE3 is an N-Channel MOSFET designed for high-efficiency PWM applications. It features a 100V drain-source voltage and a 1.8A continuous current rating.
Mfr Part #:

SI3430DV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3430DV-T1-GE3 is an N-Channel MOSFET designed for high-efficiency PWM applications. It features a 100V drain-source voltage and a 1.8A continuous current rating.
✓ Total Stock: 202,421 pcs
$ Price Range: $0.99

SI3430DV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,421 pcs
2421 pcs On Request 1 On Request On Request 21+ On Request On Request

SI3430DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3430DV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3430DV-T1-GE3 is a single N-Channel MOSFET designed for efficient power switching applications. It offers a high drain-source voltage rating of 100V and a continuous drain current capability of 1.8A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum Rds(on) of 170mOhm at 10V Vgs and 2.4A Id, and a gate threshold voltage typically around 2V. The device is optimized for high-efficiency PWM operation and is tested for 100% Rgs.

 

This MOSFET is housed in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to +150°C (TJ). Mounting is via surface mount technology.

 

Material categorization is available for compliance definitions. The product is RoHS3 compliant and has an MSL rating of 1.

SI3430DV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3430DV-T1-GE3 N-Channel 100V MOSFET
Subcategory: Single

SI3430DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3430DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3430DV-T1-GE3 Features

  • N-Channel 100V MOSFET for power switching.
  • 1.8A continuous drain current capability.
  • Low Rds(on) of 170mOhm at 10V Vgs.
  • High-efficiency PWM optimized design.
  • Compact TSOP-6 surface-mount package.

SI3430DV-T1-GE3 Applications

  • Suitable for power supply circuits.
  • Used in DC-DC converters.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

SI3430DV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI3430DV-T1-GE3?

The drain-source voltage rating is 100 V.

What is the maximum continuous drain current of the SI3430DV-T1-GE3?

The maximum continuous drain current is 1.8 A at 25°C ambient temperature.

What is the Rds(on) for the SI3430DV-T1-GE3?

The Rds(on) is a maximum of 170 mOhm at 2.4 A drain current and 10 V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI3430DV-T1-GE3 in?

The device is available in a TSOP-6 (SOT-23-6 Thin) package.

Is the SI3430DV-T1-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI3430DV-T1-GE3?

The Moisture Sensitivity Level is 1.

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