| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3430DV-T1-E3 is an N-Channel MOSFET designed for high-efficiency Pulse Width Modulation (PWM) optimized applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 1.8A at 85°C ambient temperature, and 2.4A at 25°C.
Key electrical characteristics include a maximum drain-source on-state resistance (RDS(on)) of 170mOhm at 2.4A and 10V Vgs, and 185mOhm at 2.4A and 6V Vgs. The typical gate charge (Qg) is 5.5 nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is between 2V and 4.2V at 250µA.
This MOSFET is housed in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. The operating junction and storage temperature range is -55°C to +150°C. It is rated for a maximum power dissipation of 1.14W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100 V.
It is available in a TSOP-6 (SOT-23-6 Thin, TSOT-23-6) surface mount package. The supplier device package is 6-TSOP.
The operating junction and storage temperature range is -55°C to +150°C.
The maximum continuous drain current at TA = 25°C is 2.4 A. At 85°C, it is 1.7 A. At a junction temperature of 175°C, it is 1.8 A.
The typical gate charge (Qg) at Vgs = 10V is 5.5 nC.
The maximum on-resistance (RDS(on)) at Id = 2.4A and Vgs = 10V is 170 mOhm. At Vgs = 6V, it is 185 mOhm.
The gate threshold voltage (Vgs(th)) is between 2 V and 4.2 V (at VDS = VGS, ID = 250 µA).