| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
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212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3429EDV-T1-GE3 is a P-Channel MOSFET from the TrenchFET series, designed for power management in portable and consumer electronics. It offers a drain-source voltage of 20V and a continuous drain current of up to 8A.
Key electrical characteristics include a low on-resistance of 21mOhm at 4A and 4.5V Vgs, and a gate charge of 118nC at 10V Vgs. The device is built with integrated ESD protection, typically rated at 3000V.
This MOSFET is housed in a 6-TSOP package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. Applications include load switches and DC/DC converters.
The SI3429EDV-T1-GE3 is lead (Pb)-free and halogen-free, adhering to modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V.
The maximum continuous drain current is 8A.
The typical on-resistance is 0.021 Ohm.
This MOSFET is supplied in a 6-TSOP package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.