| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,027 pcs
|
2027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI3424DV-T1-E3 is an N-Channel MOSFET belonging to the TrenchFET® series. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is specified as a maximum of 28 mOhm at 6.7A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA.
Designed for surface mounting, this component comes in a compact SOT-23-6 Thin, TSOT-23-6 package, also referred to as a 6-TSOP. Its gate charge (Qg) is 18nC at 10V. The MOSFET technology utilizes a Metal Oxide structure.
This part is RoHS3 compliant and has an MSL rating of 1. It is suitable for various electronic applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI3424DV-T1-E3 is 30V.
The continuous drain current (Id) at 25°C is 5A.
The maximum on-resistance (Rds On) is 28 mOhm at 6.7A and 10V.
It is supplied in a SOT-23-6 Thin, TSOT-23-6 package, also known as a 6-TSOP.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.