SI3424CDV-T1-GE3 The Vishay Siliconix SI3424CDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current capability. It is housed in a compact SOT-23-6 package.
Mfr Part #:

SI3424CDV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI3424CDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current capability. It is housed in a compact SOT-23-6 package.
✓ Total Stock: 100,020 pcs
$ Price Range: $0.99

SI3424CDV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
76,020 pcs
76020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
24,000 pcs
24000 pcs On Request 1 On Request On Request 17+ On Request On Request

SI3424CDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3424CDV-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SI3424CDV-T1-GE3 is an N-Channel Power MOSFET designed for load switching and DC/DC conversion applications in portable devices. It features a 30V drain-source breakdown voltage and a low on-resistance of 26 mOhm at a gate-source voltage of 10V, ensuring efficient power delivery.

 

This MOSFET offers a continuous drain current of up to 8A at 25°C case temperature and a maximum power dissipation of 3.6W. The operating junction temperature ranges from -55°C to 150°C. It is supplied in a 6-TSOP (SOT-23-6 Thin) surface-mount package, suitable for space-constrained designs.

 

The device is compliant with RoHS Directive 2002/95/EC and is halogen-free, meeting stringent environmental standards. Its TrenchFET technology provides high performance and reliability for demanding applications.

SI3424CDV-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si3424CDV
Canonical Name: Vishay Siliconix Si3424CDV-T1-GE3 N-Channel 30V MOSFET
Subcategory: Power MOSFET

SI3424CDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3424CDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3424CDV-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low on-resistance of 26mOhm at 10V Vgs.
  • Continuous drain current up to 8A.
  • Compact 6-TSOP (SOT-23-6) package.
  • Halogen-free and RoHS compliant.

SI3424CDV-T1-GE3 Applications

  • Ideal for portable device load switches.
  • Suitable for DC/DC converters.
  • Efficient power management applications.
  • Compact electronic designs.

SI3424CDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI3424CDV-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 8A at a case temperature of 25°C.

What is the Rds(on) of the SI3424CDV-T1-GE3?

The Rds(on) is a maximum of 26mOhm at a drain current of 7.2A and a gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3424CDV-T1-GE3 in?

It is supplied in a 6-TSOP (SOT-23-6 Thin) package for surface mounting.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI3424CDV-T1-GE3 halogen-free?

Yes, it is halogen-free.

Home
Account

Categories