SI3424BDV-T1-GE3 The Vishay Dale SI3424BDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It comes in a SOT-23-6 Thin package.
Mfr Part #:

SI3424BDV-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3424BDV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It comes in a SOT-23-6 Thin package.
✓ Total Stock: 8,096 pcs
$ Price Range: $0.99

SI3424BDV-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,096 pcs
8096 pcs On Request 1 On Request On Request 1240+1313+ On Request On Request

SI3424BDV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3424BDV-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI3424BDV-T1-GE3 is a single N-Channel MOSFET designed for surface mount applications. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of 8A (Tc).

 

The MOSFET has a low on-resistance of 28mOhm at 7A and 10V, with a gate threshold voltage of 3V at 250µA. Key electrical parameters include an input capacitance of 735pF at 15V and a gate charge of 19.6nC at 10V. The operating temperature range is -55°C to 150°C (TJ).

 

Packaged in a SOT-23-6 Thin or TSOT-23-6 (6-TSOP) configuration, this component is suitable for various power management and switching applications. Its surface mount design facilitates integration into compact electronic circuits.

SI3424BDV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3424BDV-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI3424BDV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3424BDV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3424BDV-T1-GE3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 8A continuous drain current rating.
  • Low Rds(on) of 28mOhm at 7A, 10V.
  • Surface mount SOT-23-6 Thin package.
  • Wide operating temperature range.

SI3424BDV-T1-GE3 Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch designs.

SI3424BDV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI3424BDV-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current rating is 8A (Tc).

What is the Rds On (Max) at specified conditions?

The Rds On (Max) is 28mOhm at 7A, 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI3424BDV-T1-GE3?

It is available in a SOT-23-6 Thin, TSOT-23-6 package.

Is the SI3424BDV-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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