| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
172,020 pcs
|
172020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,500 pcs
|
18500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3421DV-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a maximum Drain-Source Voltage of 30V and a continuous drain current of 8A at 25°C case temperature. The device offers a low on-resistance of 19.2mOhm at 7A and 10V gate-source voltage.
This MOSFET is housed in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 69nC at 10V and an input capacitance of 2580pF at 15V.
Applications for this component include load switches, adaptor switches, and DC/DC converters, particularly for mobile computing and consumer electronics. The TrenchFET Power MOSFET technology ensures high performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V (minimum) at VGS = 0 V, ID = -250 µA.
SOT-23-6 Thin, TSOT-23-6 (6-TSOP supplier package), surface mount.
-55°C to 150°C (junction temperature).
8 A at case temperature 25°C; derated at higher temperatures.
19.2 mΩ maximum at ID = 7 A, VGS = -10 V.
3 V maximum at VDS = VGS, ID = -250 µA.