| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
786,087 pcs
|
786087 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
6,000 pcs
$0.33
|
6000 pcs |
$0.33
|
1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI3417DV-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous current of 8A. The MOSFET has a low on-resistance (Rds On) of 25.2mOhm at a drain current (Id) of 7.3A and gate-source voltage (Vgs) of 10V.
This device operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 3V at 250µA. The maximum gate-source voltage is ±20V.
The SI3417DV-T1-GE3 is available in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mount applications. The supplier device package is a 6-TSOP. The maximum power dissipation is rated at 2W (Ta) or 4.2W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI3417DV-T1-GE3 is 30V.
The continuous current rating for the SI3417DV-T1-GE3 is 8A.
The Rds On (Max) for the SI3417DV-T1-GE3 is 25.2mOhm at 7.3A drain current and 10V gate-source voltage.
The operating temperature range for the SI3417DV-T1-GE3 is -55°C to 150°C (TJ).
The SI3417DV-T1-GE3 is supplied in a SOT-23-6 Thin, TSOT-23-6 package.
The SI3417DV-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI3417DV-T1-GE3 is 1 Unlimited.