SI3410DV-T1-E3 The Vishay Dale SI3410DV-T1-E3 is an N-Channel MOSFET designed for load switching and DC-to-DC applications. It features a 30V drain-source voltage and 8A continuous drain current.
Mfr Part #:

SI3410DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3410DV-T1-E3 is an N-Channel MOSFET designed for load switching and DC-to-DC applications. It features a 30V drain-source voltage and 8A continuous drain current.
✓ Total Stock: 553 pcs
$ Price Range: $0.99

SI3410DV-T1-E3 Available from 1 distributor

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SI3410DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3410DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3410DV-T1-E3 is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage. It is designed for applications such as notebook load switches and low current DC-to-DC converters.

 

This MOSFET offers a low on-state resistance, with a maximum of 0.0195 Ohms at 5A drain current and 10V gate-source voltage. It can handle a continuous drain current of up to 8A at 25°C case temperature and a maximum power dissipation of 4.1W at 25°C case temperature.

 

The device is available in a SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.

 

Compliance includes RoHS3, Halogen-free, and Lead-free standards. The Moisture Sensitivity Level (MSL) is 1.

SI3410DV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3410DV-T1-E3 N-Channel 30V MOSFET
Subcategory: N-Channel

SI3410DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI3410DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3410DV-T1-E3 Features

  • N-Channel 30V Power MOSFET.
  • Low on-state resistance.
  • Surface mount SOT-23-6 package.
  • Wide operating temperature range.
  • RoHS3 and Halogen-free compliant.

SI3410DV-T1-E3 Applications

  • Notebook load switch applications
  • Low current DC-to-DC converters
  • Power management in portable devices
  • Battery-powered system load switching
  • Surface-mount power switching circuits

SI3410DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI3410DV-T1-E3?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 8A at 25°C case temperature.

What is the typical on-resistance of this MOSFET?

The on-resistance is a maximum of 0.0195 Ohms at 5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3410DV-T1-E3 available in?

It is available in a SOT-23-6 Thin, TSOT-23-6 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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