SI3129DV-T1-GE3 The Vishay SI3129DV-T1-GE3 is a P-Channel MOSFET with a Drain-Source Voltage of 80V and a Continuous Drain Current of 5.4A. It features a low RDS(on) of 82.7mΩ at 10V Vgs.
Mfr Part #:

SI3129DV-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI3129DV-T1-GE3 is a P-Channel MOSFET with a Drain-Source Voltage of 80V and a Continuous Drain Current of 5.4A. It features a low RDS(on) of 82.7mΩ at 10V Vgs.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.99

SI3129DV-T1-GE3 Available from 1 distributor

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SI3129DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3129DV-T1-GE3 Description

Short technical summary and product information.

The Vishay SI3129DV-T1-GE3 is a P-Channel power MOSFET designed for power management applications. It offers a Drain-Source Voltage (Vds) of 80V and a maximum continuous drain current of 5.4A at 25°C case temperature.

 

Key electrical characteristics include a maximum Drain-Source On-Resistance (RDS(on)) of 82.7mΩ at a gate-source voltage (Vgs) of 10V, and 0.0827Ω at -10V Vgs. The typical gate charge (Qg) is 5.6nC. The device operates over a wide temperature range from -55°C to 150°C.

 

This MOSFET is housed in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. It is ideal for applications such as load switches and DC/DC converters in portable and consumer electronics.

SI3129DV-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SI3129DV-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI3129DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3129DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3129DV-T1-GE3 Features

  • 80V P-Channel MOSFET for power management.
  • 5.4A maximum continuous drain current.
  • Low RDS(on) of 82.7mΩ at 10V Vgs.
  • Compact TSOP-6 surface mount package.
  • Wide operating temperature range.

SI3129DV-T1-GE3 Applications

  • Ideal for load switches.
  • Suitable for DC/DC converters.
  • Used in portable electronics.
  • Power management applications.

SI3129DV-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI3129DV-T1-GE3?

The maximum drain-source voltage is 80V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.4A at 25°C case temperature and 3.8A at 25°C ambient temperature.

What is the maximum RDS(on) for this P-Channel MOSFET?

The maximum RDS(on) is 82.7mΩ at 3.8A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3129DV-T1-GE3 supplied in?

It is supplied in a 6-TSOP package, also referred to as SOT-23-6 Thin.

Is this MOSFET RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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