SI2399DS-T1-GE3 The Vishay Dale SI2399DS-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 6A continuous drain current. It is supplied in a compact SOT-23-3 package.
Mfr Part #:

SI2399DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2399DS-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 6A continuous drain current. It is supplied in a compact SOT-23-3 package.
✓ Total Stock: 157,080 pcs
$ Price Range: $0.99

SI2399DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
150,667 pcs
150667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,413 pcs
6413 pcs On Request 1 On Request On Request On Request On Request On Request

SI2399DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2399DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2399DS-T1-GE3 is a P-Channel MOSFET designed for various switching applications. It features a maximum Drain-Source Voltage (Vds) of 20V and a continuous drain current of 6A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds On) of 34mOhm at 5.1A and 10V Vgs, ensuring efficient power delivery. The gate-source voltage (Vgs) range is ±12V, with a threshold voltage (Vgs(th)) of 1.5V maximum at 250µA.

 

Packaged in a TO-236-3, SC-59, SOT-23-3 (SOT-23-3) surface-mount package, the SI2399DS-T1-GE3 is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W at 25°C case temperature.

 

This component is compliant with RoHS 3 standards and is halogen-free, making it suitable for environmentally conscious applications. Its applications include load switches, PA switches, and DC/DC converters.

SI2399DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V 6A SOT23-3 MOSFET
Subcategory: P-Channel

SI2399DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2399DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2399DS-T1-GE3 Features

  • P-Channel 20V MOSFET
  • 6A continuous drain current
  • 34mOhm max Rds On
  • SOT-23-3 surface mount package
  • Halogen-free compliance

SI2399DS-T1-GE3 Applications

  • Used in load switching applications.
  • Suitable for power amplifier switching.
  • Ideal for DC/DC converter circuits.
  • Provides low-side load switch function.

SI2399DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2399DS-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 6A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V?

The Rds On is 34mOhm at 5.1A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2399DS-T1-GE3 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is this component RoHS compliant?

Yes, it is RoHS 3 compliant.

Is this component halogen-free?

Yes, it is halogen-free.

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