SI2392ADS-T1-GE3 The Vishay Dale SI2392ADS-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 3.1A. It features a low on-resistance of 126mOhm at 10V gate-source voltage.
Mfr Part #:

SI2392ADS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2392ADS-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 3.1A. It features a low on-resistance of 126mOhm at 10V gate-source voltage.
✓ Total Stock: 1,362 pcs
$ Price Range: $0.99

SI2392ADS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,300 pcs
1300 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
62 pcs
62 pcs On Request 1 On Request On Request On Request On Request On Request

SI2392ADS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2392ADS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2392ADS-T1-GE3 is a TrenchFET® power MOSFET designed for various power management applications. It offers a 100V drain-source breakdown voltage and a continuous drain current of up to 3.1A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 126mOhm at 2A drain current and 10V gate-source voltage. The device has a gate charge of 10.4 nC and a gate-source voltage rating of ±20V. It operates within a junction temperature range of -55°C to 150°C.

 

This MOSFET is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. Applications include DC/DC converters, load switching, and LED backlighting in LCD TVs.

 

The device is rated for a maximum power dissipation of 2.5W at 25°C case temperature and 1.25W at 25°C ambient temperature when mounted on a standard FR4 board.

SI2392ADS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2392ads
Canonical Name: Vishay Dale SI2392ADS-T1-GE3 N-Channel 100V MOSFET
Subcategory: N-Channel

SI2392ADS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2392ADS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2392ADS-T1-GE3 Features

  • N-Channel TrenchFET power MOSFET.
  • 100V drain-source breakdown voltage.
  • 3.1A continuous drain current.
  • 126mOhm maximum Rds(on) at 10V.
  • SOT-23-3 surface-mount package.

SI2392ADS-T1-GE3 Applications

  • Used in DC/DC converters.
  • Suitable for load switch applications.
  • Ideal for LED backlighting.
  • Power management for mobile computing.

SI2392ADS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2392ADS-T1-GE3?

The drain-source breakdown voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.1A at 25°C case temperature.

What is the maximum on-resistance at Vgs = 10V?

The maximum on-resistance is 0.126 Ohms at Vgs = 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2392ADS-T1-GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

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