SI2387DS-T1-GE3 The Vishay Dale SI2387DS-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of -80V. It features a low on-resistance of 164mOhm at 10V gate-source voltage and is housed in a SOT-23 package.
Mfr Part #:

SI2387DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2387DS-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of -80V. It features a low on-resistance of 164mOhm at 10V gate-source voltage and is housed in a SOT-23 package.
✓ Total Stock: 744 pcs
$ Price Range: $0.99

SI2387DS-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
372 pcs
372 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
372 pcs
372 pcs On Request 1 On Request On Request On Request On Request On Request

SI2387DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2387DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2387DS-T1-GE3 is a P-Channel power MOSFET designed for various applications including load switching and circuit protection. It boasts a drain-source breakdown voltage of -80V and a maximum on-resistance of 164mOhm at a gate-source voltage of 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is packaged in a compact SOT-23 (TO-236-3) surface-mount package, making it suitable for space-constrained designs. It offers a continuous drain current of up to 3A (Tc) and 2.1A (Ta), with a maximum power dissipation of 2.5W (Tc) or 1.3W (Ta). The TrenchFET Gen IV technology ensures high performance and reliability.

 

Key electrical characteristics include a gate-source voltage rating of ±20V and a typical gate charge of 6.7nC. The device is also tested for Rg and UIS, indicating robust performance under demanding conditions. Its material categorization is compliant with Vishay's standards for definitions of compliance.

SI2387DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2387DS-T1-GE3 P-Channel 80V MOSFET
Subcategory: P-Channel

SI2387DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2387DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2387DS-T1-GE3 Features

  • P-Channel 80V power MOSFET.
  • Low on-resistance: 164mOhm at 10V.
  • SOT-23 surface-mount package.
  • Wide operating temperature range.
  • TrenchFET Gen IV technology.

SI2387DS-T1-GE3 Applications

  • Suitable for load switching.
  • Used for circuit protection.
  • Ideal for motor drive control.

SI2387DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-80 V

What is the maximum on-resistance?

164 mOhm at 2.1A and 10V gate-source voltage.

What is the continuous drain current?

3 A at 25°C case temperature.

What is the operating temperature range?

-55°C to 150°C

What package is this MOSFET in?

SOT-23-3 (TO-236-3)

Is this RoHS compliant?

Yes, RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

Level 1 Unlimited.

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