| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI2377EDS-T1-GE3 is a P-Channel power MOSFET designed for load switching applications in portable devices. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 4.4A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 61mOhm at 3.2A and 4.5V gate-source voltage (Vgs). The gate-source threshold voltage (Vgs(th)) is 1V at 250µA. It operates within a temperature range of -55°C to 150°C.
The device is housed in a SOT-23-3 (TO-236-3) surface-mount package, making it suitable for space-constrained designs. It also features built-in ESD protection with a typical performance of 2000V.
Key electrical characteristics include a maximum gate charge (Qg) of 21 nC at 8V Vgs. The MOSFET is constructed using TrenchFET® technology and is both lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI2377EDS-T1-GE3 is 20V.
The maximum continuous drain current (Id) is 4.4A at 25°C case temperature.
The Rds On is a maximum of 61mOhm at 3.2A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 (TO-236-3) surface-mount package.
Yes, this MOSFET is RoHS3 compliant and is also lead (Pb)-free and halogen-free.
The typical ESD performance is 2000V, with built-in ESD protection using a Zener Diode.