| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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120,000 pcs
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120000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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28,020 pcs
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28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2374DS-T1-GE3 is an N-Channel MOSFET designed for load switching and power management applications. It features a 20V drain-source breakdown voltage and offers low on-resistance of 30mOhm at 4A and 4.5V Vgs.
This MOSFET operates with a gate-source voltage of up to ±8V and a gate charge of 20nC at 10V. It has an input capacitance of 735pF at 10V. The device can handle a continuous drain current of 4.5A at 25°C ambient temperature and 5.9A at 25°C case temperature. Maximum power dissipation is 960mW at 25°C ambient and 1.7W at 25°C case temperature.
Packaged in a SOT-23-3 (TO-236-3, SC-59) surface-mount case, the SI2374DS-T1-GE3 operates within a temperature range of -55°C to 150°C. It is constructed using TrenchFET technology and is RoHS3 compliant and halogen-free.
Key electrical characteristics include a gate-source threshold voltage of 1V maximum at 250µA. The device also exhibits a drain-source breakdown voltage temperature coefficient of -3mV/°C and a gate-source threshold voltage temperature coefficient of -5mV/°C. Gate leakage current is a maximum of ±100nA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum gate-source voltage is ±8V.
The continuous drain current is 4.5A at 25°C ambient and 5.9A at 25°C case.
The maximum on-resistance is 30mOhm at 4A and 4.5V.
The operating temperature range is -55°C to 150°C.
It is in a TO-236-3, SC-59, SOT-23-3 package.
The RoHS status is RoHS3 Compliant.