SI2371EDS-T1-GE3 The Vishay Dale SI2371EDS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.8A. It is housed in a SOT-23 package.
Mfr Part #:

SI2371EDS-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2371EDS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.8A. It is housed in a SOT-23 package.
✓ Total Stock: 160,374 pcs
$ Price Range: $0.99

SI2371EDS-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI2371EDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2371EDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2371EDS-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 30V and a continuous drain current of up to 4.8A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 45mOhm at 3.7A and 10V Vgs. It operates within a temperature range of -55°C to 150°C and includes built-in ESD protection with a typical performance of 3000V.

 

The device is packaged in a TO-236-3, SC-59, SOT-23-3 (SOT-23) surface-mount package. It is suitable for applications such as load switches and over-voltage protection in portable and consumer electronics.

 

The SI2371EDS-T1-GE3 is manufactured using TrenchFET technology and is RoHS and Halogen-free compliant.

SI2371EDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2371EDS P-Channel 30V MOSFET
Subcategory: P-Channel

SI2371EDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2371EDS-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2371EDS-T1-GE3 Features

  • P-Channel 30V MOSFET
  • 4.8A continuous drain current
  • Low 45mOhm on-resistance
  • SOT-23 surface mount package
  • Built-in 3000V ESD protection

SI2371EDS-T1-GE3 Applications

  • Power management applications
  • Load switches
  • Over-voltage protection
  • Portable consumer devices

SI2371EDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2371EDS-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current for the SI2371EDS-T1-GE3?

The maximum continuous drain current is 4.8A at 25°C case temperature.

What is the on-resistance of the SI2371EDS-T1-GE3?

The maximum on-resistance is 45mOhm at 3.7A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2371EDS-T1-GE3 in?

It is in a TO-236-3, SC-59, SOT-23-3 (SOT-23) surface mount package.

Is the SI2371EDS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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