| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI2371EDS-T1-BE3 is a P-Channel MOSFET with a 30V drain-source voltage rating. It is designed using TrenchFET technology, offering efficient power management for portable and consumer electronics.
Key electrical characteristics include a maximum continuous drain current of 4.8A at 25°C (Tc) and 3.7A at 25°C (Ta). The on-resistance is as low as 45mOhm at 3.7A and 10V Vgs. The gate charge is typically 35nC at 10V Vgs, and the gate threshold voltage is 1.5V maximum at 250µA Id.
This MOSFET is suitable for applications such as load switches and over-voltage protection (OVP) switches. It operates within a junction temperature range of -55°C to 150°C.
The device is housed in a TO-236-3, SC-59, SOT-23-3 package and is designed for surface mounting. The maximum power dissipation is 1.7W at 25°C (Tc) and 1W at 25°C (Ta). Thermal resistance from junction to ambient is a maximum of 130°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The operating junction and storage temperature range is -55°C to 150°C.
The package type is TO-236-3, SC-59, SOT-23-3.
The maximum continuous drain current at 25°C (Tc) is 4.8A.
The maximum on-resistance is 45mOhm at 3.7A and 10V Vgs.
The typical gate charge is 35nC at 10V Vgs.
Yes, it has built-in ESD protection with a typical performance of 3000V.