Mfr Part #:

SI2365EDS-T1-GE3

Name: SI2365EDS-T1-GE3
Brand: Vishay Dale
SKU: SI2365EDS-T1-GE3
Availability: InStock

Mfr Name: Vishay Dale

MOSFET P-CH 20V 5.9A TO236

✓ Total Stock: 544,781 pcs

SI2365EDS-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	482,133 pcs On Request	482133 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	61,020 pcs On Request	61020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,628 pcs On Request	1628 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET P-CH 20V 5.9A TO236

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay Dale
Current	5.9A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA