| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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482,133 pcs
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482133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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61,020 pcs
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61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,628 pcs
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1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Si2365EDS-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for power management in portable and consumer electronics. It features a drain-source breakdown voltage of 20V and a continuous drain current of up to 5.9A at 25°C case temperature.
This MOSFET exhibits a low on-resistance of 32mOhm at a gate-source voltage of -4.5V and a drain current of 4A. It has a gate charge of 36 nC typical at 8V gate-source voltage. The device operates within a junction temperature range of -55°C to 150°C.
Packaged in a surface-mount SOT-23-3 (TO-236) package, the Si2365EDS-T1-GE3 is suitable for applications such as load switches and DC/DC converters. It is rated for a maximum power dissipation of 1.7W at 25°C case temperature and 1W at 25°C ambient temperature.
The MOSFET includes built-in ESD protection with a typical performance of 3000V. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum continuous drain current is 5.9A at 25°C case temperature.
The Rds On is a maximum of 32mOhm when tested at 4A drain current and 4.5V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 (TO-236) package.
Yes, it is RoHS3 compliant.
The MSL is 1.