| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
904,000 pcs
|
904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI2351DS-T1-GE3 from Vishay Dale is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.8A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 115mOhm at 2.4A and 4.5V, a gate threshold voltage (Vgs(th)) of 1.5V at 250µA, an input capacitance (Ciss) of 250pF at 10V, and a gate charge (Qg) of 5.1nC at 5V. The technology used is MOSFET (Metal Oxide).
This component is housed in a SOT-23-3 (TO-236) package, suitable for surface mounting. The package type is listed as Cut Tape (CT). Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted as low confidence and require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI2351DS-T1-GE3 is 20V.
The continuous drain current (Id) for the SI2351DS-T1-GE3 is 2.8A at 25°C.
The on-resistance (Rds On) is a maximum of 115mOhm at 2.4A and 4.5V.
The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA.
The SI2351DS-T1-GE3 is available in a SOT-23-3 (TO-236) package, suitable for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.