| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,643,636 pcs
|
1643636 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2347DS-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 5A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 42mOhm at 3.8A and 10V Vgs, and a gate charge of 22nC at 10V Vgs. The gate-source threshold voltage is a maximum of 2.5V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a surface-mount SOT-23-3 (TO-236) package, suitable for compact designs. The technology employed is MOSFET (Metal Oxide), specifically part of the TrenchFET Power MOSFET family.
Applications include load switching, notebook adapter switching, and DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SOT-23-3 (TO-236).
-55°C to 150°C (junction).
42mOhm maximum at 3.8A and 10V gate-source voltage.
2.5V maximum at 250µA drain current.
5A at 25°C case temperature.
22nC maximum at 10V gate-source voltage.