| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2343DS-T1-GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for low-voltage switching applications requiring efficient power management.
This MOSFET features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.1A, making it suitable for load switching and power distribution circuits. The device is housed in a compact SOT23-3 surface-mount package, which is ideal for space-constrained designs.
Typical applications include power management in portable electronics, battery protection circuits, and DC-DC converter stages. The P-Channel configuration simplifies drive circuitry in high-side switching topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The continuous drain current (Id) is 3.1A.
It is available in a SOT23-3 surface-mount package.