SI2343DS-T1-E3 The Vishay Dale SI2343DS-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 3.1A.
Mfr Part #:

SI2343DS-T1-E3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2343DS-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 3.1A.
Total Stock: 2,009,735 pcs
$ Price Range: $0.99

SI2343DS-T1-E3 Available from 7 distributors

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SI2343DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2343DS-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI2343DS-T1-E3 is a P-Channel MOSFET with a maximum drain-source voltage (Vdss) of 30V and a continuous drain current rating of 3.1A at ambient temperature. It offers a low on-resistance of 53mOhm at 4A and 10V gate-source voltage. The MOSFET has a gate threshold voltage of 3V at 250µA and a maximum gate-to-source voltage of ±20V. Its input capacitance is rated at 540pF at 15V.

 

The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 750mW at ambient temperature. It utilizes MOSFET (Metal Oxide) technology.

 

Packaged in a SOT-23-3 (TO-236) surface mount package, this component is suitable for various electronic designs requiring a P-Channel MOSFET. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.

SI2343DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2343DS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2343DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2343DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2343DS-T1-E3 Features

  • P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 3.1A continuous drain current.
  • 53mOhm maximum on-resistance.
  • Surface mount SOT-23-3 package.

SI2343DS-T1-E3 Applications

  • Ideal for power management in portable devices.
  • Used in load switching and battery protection.
  • Suitable for DC-DC converter circuits.
  • Can be used in general purpose switching applications.

SI2343DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the continuous drain current?

3.1A at ambient temperature.

What is the power dissipation?

750mW at ambient temperature.

What is the on-resistance?

53mOhm maximum at 4A, 10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

SOT-23-3 (TO-236-3, SC-59).

What is the FET type?

P-Channel.

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