| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,235 pcs
|
3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
278 pcs
|
278 pcs | On Request | 1 | On Request | On Request | 1812+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2342DS-T1-GE3 is a single N-Channel MOSFET designed for low voltage applications. It offers a Drain-Source Voltage (Vds) of 8V and a continuous drain current (Id) of up to 6A at 25°C case temperature.
Key electrical characteristics include a low on-resistance, with a maximum of 17mOhm at 7.2A and 4.5V gate-source voltage. The gate charge (Qg) is typically 6 nC at Vgs = 4.5V, and the input capacitance (Ciss) is 1070 pF at 4V.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It is suitable for load switches and low voltage operating circuits, supporting gate drive voltages from 1.2V to 5V.
The device is packaged in a SOT-23 (TO-236-3, SC-59) surface mount package and is available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vdss) for the SI2342DS-T1-GE3 is 8V.
The continuous drain current (Id) is 6A at 25°C case temperature.
The maximum on-resistance (Rds On) is 17mOhm at 7.2A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
The SI2342DS-T1-GE3 is supplied in a SOT-23 (TO-236-3, SC-59) surface mount package.
Yes, the SI2342DS-T1-GE3 is lead (Pb)-free and halogen-free.