| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25,020 pcs
|
25020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2338DS-T1-GE3 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 6A at 25°C case temperature.
This MOSFET offers a low on-resistance, with a maximum of 0.028 Ohms at 5.5A and 10V Vgs. It has a typical gate charge of 4.2 nC at 10V Vgs and a gate threshold voltage of 2.5V at 250µA.
The device is housed in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. Its operating temperature range is -55°C to 150°C.
Applications include DC/DC converters and high-speed switching circuits. The maximum power dissipation is 2.5W when mounted on a PCB with a 1" x 1" FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
6 A at case temperature 25°C.
28 mOhm maximum at 5.5 A, 10 V gate drive.
2.5 V maximum at 250 µA drain current.
-55°C to 150°C junction temperature.
SOT-23-3 surface-mount package.