SI2338DS-T1-GE3 The Vishay Dale SI2338DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It comes in a compact SOT-23 package.
Mfr Part #:

SI2338DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2338DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It comes in a compact SOT-23 package.
✓ Total Stock: 145,553 pcs
$ Price Range: $0.99

SI2338DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
25,020 pcs
25020 pcs On Request 1 On Request On Request On Request On Request On Request

SI2338DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2338DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2338DS-T1-GE3 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 6A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with a maximum of 0.028 Ohms at 5.5A and 10V Vgs. It has a typical gate charge of 4.2 nC at 10V Vgs and a gate threshold voltage of 2.5V at 250µA.

 

The device is housed in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. Its operating temperature range is -55°C to 150°C.

 

Applications include DC/DC converters and high-speed switching circuits. The maximum power dissipation is 2.5W when mounted on a PCB with a 1" x 1" FR4 board.

SI2338DS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2338DS
Canonical Name: Vishay Dale Si2338DS-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI2338DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2338DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2338DS-T1-GE3 Features

  • N-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Low on-resistance.
  • SOT-23 surface-mount package.

SI2338DS-T1-GE3 Applications

  • Load switching in portable electronics.
  • Power management for DC-DC converters.
  • Battery protection circuits.
  • Low-voltage motor control.

SI2338DS-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30 V.

What is the continuous drain current rating?

6 A at case temperature 25°C.

What is the on-resistance?

28 mOhm maximum at 5.5 A, 10 V gate drive.

What is the gate threshold voltage?

2.5 V maximum at 250 µA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this MOSFET available in?

SOT-23-3 surface-mount package.

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