SI2337DS-T1-E3 The Vishay Dale SI2337DS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 2.2A. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2337DS-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2337DS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 2.2A. It is supplied in a SOT-23-3 package.
✓ Total Stock: 87,136 pcs
$ Price Range: $0.99

SI2337DS-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI2337DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2337DS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2337DS-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 80V and a maximum continuous drain current of 2.2A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 270mOhm at a gate-source voltage of 10V and a drain current of 1.2A. The gate-source voltage range is ±20V, with a threshold voltage of 4V at 250µA. It has a typical gate charge of 17nC at 10V.

 

The device operates within a junction temperature range of -55°C to 150°C. It is packaged in a SOT-23-3 (TO-236) surface-mount package, suitable for space-constrained designs. The maximum power dissipation is 760mW when mounted on a 1" x 1" FR4 board (Ta = 25°C) or 2.5W at 25°C case temperature (Tc).

 

Compliance information indicates RoHS3 compliance and an MSL rating of 1. The device is designed for applications requiring efficient switching and power management.

SI2337DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2337DS-T1-E3 P-Channel 80V MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI2337DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2337DS-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2337DS-T1-E3 Features

  • P-Channel 80V MOSFET
  • 2.2A continuous drain current
  • 270mOhm RdsOn at 10V Vgs
  • SOT-23-3 surface mount package
  • RoHS3 Compliant

SI2337DS-T1-E3 Applications

  • Power switching applications
  • Load switching circuits
  • Battery management systems
  • General purpose switching

SI2337DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of SI2337DS-T1-E3?

-80V (minimum) at VGS=0V, ID=-250μA.

What is the package type for SI2337DS-T1-E3?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C junction and storage.

What is the continuous drain current at 25°C?

2.2A at case temperature 25°C.

What is the on-resistance at 10V gate drive?

270mOhm maximum at ID=1.2A, VGS=10V.

What is the gate threshold voltage?

4V maximum at ID=250μA.

What is the input capacitance?

500pF at VDS=40V.

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