| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65,036 pcs
|
65036 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI2337DS is a P-Channel power MOSFET designed for various electronic applications. It offers a drain-source voltage (VDS) of -80V and a gate-source voltage (VGS) of ±20V.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 0.270Ω at VGS = -10V and 0.303Ω at VGS = -6V. The typical gate charge (Qg) is 7nC. The continuous drain current (ID) is rated at -2.2A at TC = 25°C.
This MOSFET is housed in a compact SOT-23 (TO-236) package, suitable for surface mounting. The operating junction and storage temperature range is from -55°C to +150°C. It is available in lead (Pb)-free and halogen-free options.
Applications include general-purpose switching and power management circuits where a reliable P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is -80V.
The maximum on-resistance (RDS(on)) is 0.270Ω at VGS = -10V.
The continuous drain current (ID) is -2.2A at TC = 25°C.
The SI2337DS is available in a SOT-23 (TO-236) package.
The operating junction and storage temperature range is -55°C to +150°C.