| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78 pcs
|
78 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2336DS-T1-GE3 is an N-Channel MOSFET designed for various applications. It features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current of 5.2A at 25°C case temperature. The Rds On is specified at a maximum of 42mOhm when tested at 3.8A drain current and 4.5V gate-source voltage, with drive voltages ranging from 1.8V to 4.5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. The technology employed is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type. Key electrical parameters include a gate charge of 15nC (max) at 8V Vgs and an input capacitance of 560pF (max) at 15V Vds. The maximum power dissipation is 1.25W when mounted on a 1" x 1" FR4 board (Ta = 25°C) and 1.8W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 30V.
The maximum Gate-Source Voltage is ±8V.
The maximum continuous drain current is 5.2A.
The maximum Rds On is 42mOhm at 3.8A drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is in a TO-236-3, SC-59, SOT-23-3 package.