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SI2334DS-T1-GE3 The Vishay Dale SI2334DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.9A. It is available in a surface-mount SOT-23-3 package.
Mfr Part #:

SI2334DS-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2334DS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.9A. It is available in a surface-mount SOT-23-3 package.
✓ Total Stock: 98,200 pcs
$ Price Range: $0.99

SI2334DS-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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98,200 pcs
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SI2334DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SI2334DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2334DS-T1-GE3 is an N-Channel Power MOSFET designed for applications requiring efficient switching. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 4.9A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 0.044 Ohm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 4.2A. It also provides a gate charge (Qg) of 3.7 nC typical at Vgs = 4.5V.

 

The device operates over a temperature range of -55°C to 150°C and is housed in a compact TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

 

Key electrical characteristics include an input capacitance (Ciss) of 634 pF and an output capacitance (Coss) of 65 pF. The device is compliant with RoHS and Halogen-free standards.

SI2334DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2334DS N-Channel 30V MOSFET
Subcategory: N-Channel

SI2334DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2334DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2334DS-T1-GE3 Features

  • 30V Drain-Source Voltage rating.
  • 4.9A Continuous Drain Current.
  • Low Rds(on) of 0.044 Ohm.
  • Surface mount SOT-23-3 package.
  • RoHS and Halogen-free compliant.

SI2334DS-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Ideal for load switch applications.
  • Designed for portable devices.

SI2334DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.9A at 25°C case temperature.

What is the Rds(on) at Vgs = 4.5V?

The Rds(on) is a maximum of 0.044 Ohm at Vgs = 4.5V and Id = 4.2A.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is this MOSFET in?

This MOSFET is in a TO-236-3, SC-59, SOT-23-3 package.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

Is this product Halogen-free?

Yes, this product is Halogen-free.

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