SI2333DS-T1-GE3 The Vishay Dale SI2333DS-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage and 4.1A continuous drain current. It is supplied in a surface-mount SOT-23-3 package.
Mfr Part #:

SI2333DS-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2333DS-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage and 4.1A continuous drain current. It is supplied in a surface-mount SOT-23-3 package.
✓ Total Stock: 16,312 pcs
$ Price Range: $0.99

SI2333DS-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
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1,000 pcs
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312 pcs
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SI2333DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2333DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2333DS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 12V and a continuous drain current of 4.1A at ambient temperature. The on-resistance is specified as a maximum of 32mOhm at 5.3A and 4.5V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It has a gate charge of 18nC maximum at 6V and an input capacitance of 1100pF maximum at 6V. The gate threshold voltage is 1V maximum at 250µA.

 

The device is packaged in a SOT-23-3 (TO-236) surface-mount package, suitable for space-constrained designs. The power dissipation is rated at 750mW maximum at ambient temperature. The technology used is MOSFET, specifically a P-Channel type.

 

This component is RoHS3 compliant and has an MSL rating of 1. It is supplied on a reel for automated assembly processes.

SI2333DS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Dale SI2333DS-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI2333DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2333DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2333DS-T1-GE3 Features

  • P-Channel MOSFET with 12V drain-source voltage.
  • Continuous drain current of 4.1A.
  • Low on-resistance of 32mOhm.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range.

SI2333DS-T1-GE3 Applications

  • Suitable for power switching applications.
  • Used in battery management circuits.
  • Ideal for load switch functions.
  • Applicable in low-voltage DC-DC converters.

SI2333DS-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2333DS-T1-GE3?

The maximum drain-source voltage is 12 V.

What is the continuous drain current rating?

The continuous drain current is 4.1 A.

What is the maximum on-resistance?

The maximum on-resistance is 32 mOhm at 5.3A, 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI2333DS-T1-GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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