| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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292,020 pcs
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292020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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39,000 pcs
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39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
78 pcs
|
78 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
78 pcs
|
78 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 7 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2333DDS-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale. It features a drain-source breakdown voltage of -12V (minimum) and a maximum continuous drain current of 6A at case temperature 25°C. The gate threshold voltage is 1V maximum at 250µA drain current. The device is designed for low-voltage power management and load switching applications. It is housed in a compact SOT-23-3 surface-mount package, suitable for space-constrained designs. The maximum power dissipation is 1.7W at 25°C case temperature, derating to 1.1W at 70°C. The gate-source voltage rating is ±8V. Pulsed drain current capability is 20A for 300µs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -12V minimum, and the gate-source voltage is ±8V maximum.
It is housed in a SOT-23-3 surface-mount package.
The maximum continuous drain current is 6A at case temperature 25°C, with derating at higher temperatures (e.g., -5A at Ta=25°C).
The gate threshold voltage is 1V maximum at 250µA drain current.