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1,000,000 pcs
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1000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Si2333DDS-T1-GE3 is a P-Channel MOSFET designed for electronic applications requiring efficient power switching. It offers a maximum continuous drain current of 6A and a maximum drain-source voltage of 12V. The MOSFET operates with an enhancement channel mode and has a maximum drain-source resistance of 19Ω.
The component is supplied in a surface-mount SOT-23 package, making it suitable for space-constrained designs. It features a minimum operating temperature of -55°C and a maximum operating temperature of 150°C. The typical gate charge is 23nC at Vgs=12V, and it has a forward voltage of -1.2V.
With a maximum power dissipation of 1.7W, this MOSFET is a reliable choice for various power management tasks. Its compact dimensions, with a height of 1.02mm and a length of 3.04mm, facilitate integration into dense circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 12V.
The Si2333DDS-T1 is housed in a SOT-23 package for surface-mount assembly.
The operating temperature range is -55°C to 150°C.
The maximum continuous drain current is 6A.
The maximum drain-source resistance is 19Ω.
The maximum power dissipation is 1.7W.
It is surface-mount.