SI2333CDS-T1-GE3 The Vishay Dale SI2333CDS-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage rating and a continuous drain current of 7.1A at 25°C case temperature. It is housed in a SOT-23-3 package.
Mfr Part #:

SI2333CDS-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2333CDS-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage rating and a continuous drain current of 7.1A at 25°C case temperature. It is housed in a SOT-23-3 package.
✓ Total Stock: 11,291 pcs
$ Price Range: $0.99

SI2333CDS-T1-GE3 Available from 4 distributors

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SI2333CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2333CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2333CDS-T1-GE3 is a P-Channel MOSFET designed for load and PA switching applications. It features Vishay's TrenchFET power MOSFET technology, offering low on-resistance and efficient performance.

 

Key electrical specifications include a maximum drain-source voltage (VDS) of 12V and a maximum gate-source voltage (VGS) of ±8V. The on-resistance (RDS(on)) is rated at a maximum of 35mΩ at an Id of 5.1A and Vgs of -4.5V. Typical gate charge (Qg) is 9nC at Vgs = -4.5V.

 

This MOSFET can handle a continuous drain current (ID) of up to 7.1A at 25°C case temperature and 5.1A at 25°C ambient temperature. Maximum power dissipation (PD) is 2.5W at 25°C case temperature and 1.25W at 25°C ambient temperature. The operating junction and storage temperature range is -55°C to +150°C.

 

The device is supplied in a SOT-23-3 (TO-236-3) surface mount package, suitable for compact designs. It operates within a temperature range of -55°C to 150°C.

SI2333CDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2333CDS-T1-GE3 P-Channel 12V MOSFET
Subcategory: Single

SI2333CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2333CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2333CDS-T1-GE3 Features

  • P-Channel TrenchFET power MOSFET.
  • 12V drain-source voltage rating.
  • Low on-resistance of 35mΩ max.
  • 7.1A continuous drain current.
  • SOT-23-3 surface mount package.

SI2333CDS-T1-GE3 Applications

  • Suitable for load switching.
  • Ideal for PA switching applications.
  • Designed for general purpose switching.

SI2333CDS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2333CDS-T1-GE3?

The drain-source breakdown voltage is -12V.

What is the maximum continuous drain current for the SI2333CDS-T1-GE3?

The maximum continuous drain current is -7.1A at 25°C case temperature.

What is the on-resistance of the SI2333CDS-T1-GE3 at Vgs = -4.5V?

The maximum on-resistance is 35mΩ at an Id of 5.1A and Vgs of -4.5V.

What is the package type for the SI2333CDS-T1-GE3?

The package type is SOT-23-3 (TO-236-3).

What is the operating temperature range for the SI2333CDS-T1-GE3?

The operating junction and storage temperature range is -55°C to +150°C.

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