SI2333CDS-T1-E3 The Vishay Dale SI2333CDS-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage rating. It features a low on-resistance and is supplied in a SOT-23-3 package.
Mfr Part #:

SI2333CDS-T1-E3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2333CDS-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage rating. It features a low on-resistance and is supplied in a SOT-23-3 package.
✓ Total Stock: 1,566,777 pcs
$ Price Range: $0.99

SI2333CDS-T1-E3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI2333CDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2333CDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2333CDS-T1-E3 is a P-Channel MOSFET designed for load and PA switching applications. It operates with a drain-source voltage (Vds) of 12V and can handle a continuous drain current of up to 7.1A at 25°C case temperature.

 

This MOSFET utilizes TrenchFET® technology, offering low on-resistance values such as 35mΩ at 5.1A and 4.5V Vgs. The device is specified for an operating junction temperature range of -55°C to +150°C. Its thermal resistance is rated at 50°C/W junction-to-case (drain).

 

The SI2333CDS-T1-E3 is packaged in a SOT-23-3 (TO-236) surface-mount package, making it suitable for compact designs. The gate-source voltage (Vgs) maximum rating is ±8V, and the gate-source threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.

 

This component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected, providing a reliable solution for various electronic designs requiring efficient power switching.

SI2333CDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2333CDS-T1-E3 P-Channel 12V MOSFET
Subcategory: P-Channel

SI2333CDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2333CDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2333CDS-T1-E3 Features

  • P-Channel 12V MOSFET technology.
  • Low on-resistance: 35mΩ max.
  • Continuous drain current 7.1A.
  • SOT-23-3 surface mount package.
  • TrenchFET® power MOSFET design.

SI2333CDS-T1-E3 Applications

  • Load switch applications
  • PA switch applications
  • Power management in portable devices
  • DC-DC converter circuits
  • Battery protection circuits

SI2333CDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI2333CDS-T1-E3?

The drain-source voltage rating is 12V.

What is the maximum continuous drain current for the SI2333CDS-T1-E3?

The maximum continuous drain current is 7.1A at 25°C case temperature.

What package type is the SI2333CDS-T1-E3 MOSFET supplied in?

The SI2333CDS-T1-E3 is supplied in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range for the SI2333CDS-T1-E3?

The operating junction and storage temperature range is -55°C to +150°C.

What is the RoHS status of the SI2333CDS-T1-E3?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI2333CDS-T1-E3?

The Moisture Sensitivity Level is 1.

What is the REACH status for the SI2333CDS-T1-E3?

The REACH status is REACH Unaffected.

Home
Account

Categories