SI2331DS-T1-E3 The Vishay Dale SI2331DS-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 3.2A. It is supplied in a SOT-23-3 surface mount package.
Mfr Part #:

SI2331DS-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2331DS-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 3.2A. It is supplied in a SOT-23-3 surface mount package.
✓ Total Stock: 19,495 pcs
$ Price Range: $0.99

SI2331DS-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,495 pcs
19495 pcs On Request 1 On Request On Request 06+ On Request On Request

SI2331DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2331DS-T1-E3 Description

Short technical summary and product information.

This P-Channel MOSFET from Vishay Dale, part number SI2331DS-T1-E3, is designed for general-purpose applications. It features a maximum drain-source voltage (Vdss) of 12V and a continuous drain current (Ta) of 3.2A. The MOSFET has a low Rds On of 48mOhm at 3.6A and 4.5V.

 

Key electrical characteristics include an input capacitance (Ciss) of 780pF at 6V and a gate charge (Qg) of 14nC at 4.5V. The operating temperature range is -55°C to 150°C (TJ). The device is housed in a SOT-23-3 (TO-236) surface mount package, suitable for compact designs.

 

The SI2331DS-T1-E3 is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances. Its MSL rating is 1, signifying unlimited moisture sensitivity level.

SI2331DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2331DS-T1-E3 P-Channel MOSFET
Subcategory: P-Channel

SI2331DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2331DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2331DS-T1-E3 Features

  • P-Channel MOSFET technology
  • 12V maximum drain-source voltage
  • 3.2A continuous drain current
  • SOT-23-3 surface mount package
  • RoHS3 compliant

SI2331DS-T1-E3 Applications

  • Used in low-voltage power management circuits.
  • Suitable for load switching applications.
  • Ideal for battery powered portable devices.
  • Used in DC-DC converter circuits.

SI2331DS-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the SI2331DS-T1-E3?

The maximum drain to source voltage (Vdss) is 12V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 3.2A at ambient temperature.

What is the on-resistance of the SI2331DS-T1-E3?

The maximum on-resistance (Rds on) is 48mOhm at a gate drive of 4.5V and drain current of 3.6A.

What package type is the SI2331DS-T1-E3 available in?

It is available in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SI2331DS-T1-E3?

The maximum gate threshold voltage (Vgs(th)) is 900mV at 250µA drain current.

Home
Account

Categories