SI2328DS-T1-GE3 The Vishay Dale SI2328DS-T1-GE3 is an N-Channel MOSFET with a 100V Drain-Source Voltage and 1.15A continuous drain current. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2328DS-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2328DS-T1-GE3 is an N-Channel MOSFET with a 100V Drain-Source Voltage and 1.15A continuous drain current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 120,965 pcs
$ Price Range: $0.99

SI2328DS-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
231 pcs
231 pcs On Request 1 On Request On Request On Request On Request On Request
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201 pcs
201 pcs On Request 1 On Request On Request On Request On Request On Request

SI2328DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2328DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2328DS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage (Vds) of 100V and a continuous drain current of 1.15A at 25°C ambient temperature.

 

The MOSFET has a low Drain-Source On-Resistance (Rds On) of 250mOhm at 1.5A and 10V Vgs, contributing to efficient power handling. The Gate-Source Voltage (Vgs) range is ±20V, with a Gate Threshold Voltage (Vgs(th)) of 4V maximum at 250µA.

 

This component is housed in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C.

 

The Si2328DS-T1-GE3 is RoHS3 compliant and Halogen-free, indicating adherence to environmental standards.

SI2328DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2328DS N-Channel 100V MOSFET
Subcategory: N-Channel

SI2328DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2328DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2328DS-T1-GE3 Features

  • N-Channel 100V MOSFET
  • 1.15A continuous drain current
  • 250mOhm Rds On at 10V Vgs
  • SOT-23-3 surface mount package
  • Halogen-free and RoHS3 compliant

SI2328DS-T1-GE3 Applications

  • General purpose switching applications
  • Power management circuits
  • Low voltage motor control
  • Battery powered devices

SI2328DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2328DS-T1-GE3?

The maximum drain-source voltage is 100 V.

What is the continuous drain current of the SI2328DS-T1-GE3?

The continuous drain current is 1.15A at 25°C ambient temperature.

What is the Rds On for the SI2328DS-T1-GE3?

The Rds On is a maximum of 250mOhm at 1.5A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2328DS-T1-GE3 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the SI2328DS-T1-GE3 RoHS compliant?

Yes, the SI2328DS-T1-GE3 is RoHS3 Compliant.

Is the SI2328DS-T1-GE3 Halogen-free?

Yes, the SI2328DS-T1-GE3 is Halogen-free.

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