| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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86,923 pcs
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86923 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,586 pcs
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3586 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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2,250 pcs
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2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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191 pcs
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191 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2325DS-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 530mA at 25°C ambient temperature. The device exhibits a low on-resistance (Rds On) of 1.2 Ohm when driven with 10V gate-source voltage and 500mA drain current.
This MOSFET utilizes TrenchFET technology for improved performance and features a gate-source voltage (Vgs) range of ±20V. Its gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. The device is suitable for applications requiring efficient switching and low power loss.
Packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package, the SI2325DS-T1-GE3 is designed for space-constrained applications. It operates across a wide temperature range of -55°C to 150°C (TJ). The device also features a maximum power dissipation of 750mW at 25°C ambient temperature and a junction-to-ambient thermal resistance of 100°C/W.
Key electrical characteristics include an input capacitance (Ciss) of 510pF at 25V and a total gate charge (Qg) of 7.7nC at 10V. The device is RoHS3 compliant and Halogen-free, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SI2325DS-T1-GE3 is 150V.
The Rds On is a maximum of 1.2 Ohm at 500mA drain current and 10V gate-source voltage.
The SI2325DS-T1-GE3 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI2325DS-T1-GE3 is RoHS3 Compliant.
Yes, the SI2325DS-T1-GE3 is Halogen-free.