SI2325DS-T1-E3 The Vishay Dale SI2325DS-T1-E3 is a P-Channel MOSFET with a 150V drain-source voltage rating. It is housed in a compact SOT-23-3 package.
Mfr Part #:

SI2325DS-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2325DS-T1-E3 is a P-Channel MOSFET with a 150V drain-source voltage rating. It is housed in a compact SOT-23-3 package.
✓ Total Stock: 164,321 pcs
$ Price Range: $0.99

SI2325DS-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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149,421 pcs
149421 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,709 pcs
9709 pcs On Request 1 On Request On Request 13+ On Request On Request
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4,110 pcs
4110 pcs On Request 1 On Request On Request 11+ On Request On Request
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1,081 pcs
1081 pcs On Request 1 On Request On Request On Request On Request On Request

SI2325DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2325DS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale Si2325DS is a P-Channel TrenchFET Power MOSFET designed for applications such as active clamp circuits in DC/DC power supplies. It offers ultra-low on-resistance and a small footprint, making it suitable for space-constrained designs.

 

This MOSFET features a maximum drain-source voltage of 150V and a continuous drain current of up to 0.69A at 25°C ambient temperature. The on-resistance is specified at 1.2Ω maximum at 500mA and 10V gate-source voltage. The operating temperature range is from -55°C to 150°C.

 

The device is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package. It is RoHS3 compliant and halogen-free, meeting environmental standards for modern electronic designs.

SI2325DS-T1-E3 Quick Information

Product Type: MOSFET
Series: Si2325DS
Canonical Name: Vishay Siliconix Si2325DS P-Channel 150V MOSFET
Subcategory: Single

SI2325DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2325DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2325DS-T1-E3 Features

  • P-Channel TrenchFET Power MOSFET
  • 150V Drain-Source Voltage
  • Ultra Low On-Resistance
  • Compact SOT-23-3 Package
  • Halogen-free Compliance

SI2325DS-T1-E3 Applications

  • Active clamp circuits
  • DC/DC power supplies
  • Switching applications

SI2325DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2325DS-T1-E3?

The maximum drain-source voltage is 150 V.

What is the typical gate charge for this MOSFET?

The typical gate charge is 7.7 nC at VGS = 10 V.

What is the maximum on-resistance at a gate drive of 10V?

The maximum on-resistance is 1.2 Ω at ID = 0.5 A and VGS = 10 V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI2325DS-T1-E3 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

Is this component halogen-free?

Yes, it is halogen-free.

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